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파일다운로드 1f noise of SnO2 nanowire transistors.pdf
Link : [http://]

 

1/ f noise of SnO​2 nanowire transistors

Sanghyun Ju, Pochiang Chen, Chongwu Zhou, Young-geun Ha, Antonio Facchetti, Tobin J. Marks, Sunkook Kim, Saeed Mohammadi, and David B. Janes

 

Appl. Phys. Lett. 92 (24) , art. no. 243120 (2008)

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파일다운로드 Interface studies of ZnO Nanowire transistors using low-frequency noise and temperature-dependent I-V measurements.pdf
Link : [http://]

 

Interface studies of ZnO Nanowire transistors using low-frequency noise and temperature-dependent I-V measurements

 

Kim Sunkook Kook, Mohammadi Saeed, Janes David B, Ha Young-geun, Facchetti Antonio, Marks And Tobin J

 

Appl. Phys. Lett. 92 (2) , art. no. 022104 (2008)

 

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파일다운로드 Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis.pdf
Link : [http://]

 

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis 

 

S. Kim, S.W. Lee, Y. Xuan, P. D. Ye, and S. Mohammadi


Solid-State Electronics 52, 1260 (2008)

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파일다운로드 Enhancement-mode GaAs MOS-HEMTs with atomic layer deposited high-k gate dielectrics.pdf
Link : [http://]

Enhancement-mode GaAs MOS-HEMTs with atomic layer deposited high-k gate dielectrics


Yang T, Sharifi Hasan, Kim Sunkook, Xuan Y, Shen Tian, Mohammadi Saeed, Ye P.D.


Appl. Phys. Lett. 91 (21), art. no. 212101 (2007)

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파일다운로드 Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics.pdf
Link : [http://]


Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics


H. C. Lin, Sun Kook Kim, D. Chang, Y. Xuan, S. Mohammadi, P. D. Ye, G. Lu, A. Facchetti, and T. J. Marks 


Appl. Phys. Lett.  91 (9), art. no. 092103 (2007)

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파일다운로드 Atomic layer deposited Al2O3 for Gate Dielectrics and passivation layer of single-walled carbon nanotube transistors.pdf
Link : [http://]

 

Atomic layer deposited Al​2O​3 for Gate Dielectrics and passivation layer of single-walled carbon nanotube transistors


Kim SunKook, Y. Xuan, P. D. Ye, S. Mohammadi, J. H. Back, and Moonsub Shim


Appl. Phys. Lett. 90, 163108 (2007)

 

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